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2SD2257,Q(J

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SD2257,Q(J
Description: TRANS NPN 3A 100V TO220-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 2W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition -
Supplier Device Package TO-220NIS
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A
Current - Collector (Ic) (Max) 3A
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Voltage - Collector Emitter Breakdown (Max) 100V
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