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BAS316,H3F

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Diodes - Rectifiers - Single
Data Sheet: BAS316,H3F
Description: DIODE GEN PURP 100V 250MA USC
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Diodes - Rectifiers - Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Diode Type Standard
Part Status Active
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Capacitance @ Vr, F 0.35pF @ 0V, 1MHz
Supplier Device Package USC
Reverse Recovery Time (trr) 3ns
Current - Reverse Leakage @ Vr 200nA @ 80V
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 250mA
Operating Temperature - Junction 150°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
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