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GT10J312(Q)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - IGBTs - Single
Data Sheet: GT10J312(Q)
Description: IGBT 600V 10A 60W TO220SM
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - IGBTs - Single
Series -
IGBT Type -
Packaging Tube
Input Type Standard
Part Status Obsolete
Power - Max 60W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition 300V, 10A, 100Ohm, 15V
Base Part Number GT10
Switching Energy -
Td (on/off) @ 25°C 400ns/400ns
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220SM
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Reverse Recovery Time (trr) 200ns
Current - Collector (Ic) (Max) 10A
Current - Collector Pulsed (Icm) 20A
Voltage - Collector Emitter Breakdown (Max) 600V
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