GT10J312(Q)
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - IGBTs - Single |
Data Sheet: | GT10J312(Q) |
Description: | IGBT 600V 10A 60W TO220SM |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - IGBTs - Single |
Series | - |
IGBT Type | - |
Packaging | Tube |
Input Type | Standard |
Part Status | Obsolete |
Power - Max | 60W |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Test Condition | 300V, 10A, 100Ohm, 15V |
Base Part Number | GT10 |
Switching Energy | - |
Td (on/off) @ 25°C | 400ns/400ns |
Operating Temperature | 150°C (TJ) |
Supplier Device Package | TO-220SM |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Reverse Recovery Time (trr) | 200ns |
Current - Collector (Ic) (Max) | 10A |
Current - Collector Pulsed (Icm) | 20A |
Voltage - Collector Emitter Breakdown (Max) | 600V |
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In Stock 80 pcs
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