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HN1B04FE-GR,LF

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HN1B04FE-GR,LF
Description: TRANS NPN/PNP 50V 0.15A ES6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Type NPN, PNP
Operating Temperature 150°C (TJ)
Frequency - Transition 80MHz
Supplier Device Package ES6
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector (Ic) (Max) 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max) 50V
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