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HN1C03F-B(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HN1C03F-B(TE85L,F)
Description: TRANS 2NPN 20V 0.3A SM6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Type 2 NPN (Dual)
Operating Temperature 150°C (TJ)
Frequency - Transition 30MHz
Supplier Device Package SM6
Vce Saturation (Max) @ Ib, Ic 100mV @ 3mA, 30mA
Current - Collector (Ic) (Max) 300mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 4mA, 2V
Voltage - Collector Emitter Breakdown (Max) 20V
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