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HN3C51F-GR(TE85L,F

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HN3C51F-GR(TE85L,F
Description: TRANS 2NPN 120V 0.1A SM6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Obsolete
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Type 2 NPN (Dual)
Operating Temperature 150°C (TJ)
Frequency - Transition 100MHz
Supplier Device Package SM6
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max) 120V
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