MT3S111(TE85L,F)
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - Bipolar (BJT) - RF |
Data Sheet: | MT3S111(TE85L,F) |
Description: | RF TRANS NPN 6V 11.5GHZ SMINI |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - Bipolar (BJT) - RF |
Gain | 12dB |
Series | - |
Packaging | Digi-Reel® |
Part Status | Active |
Power - Max | 700mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Transistor Type | NPN |
Operating Temperature | 150°C (TJ) |
Frequency - Transition | 11.5GHz |
Supplier Device Package | S-Mini |
Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 6V |
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In Stock 6629 pcs
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