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MT3S111TU,LF
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - RF |
| Data Sheet: | MT3S111TU,LF |
| Description: | RF SIGE NPN BIPOLAR TRANSISTOR N |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - RF |
| Gain | 12.5dB |
| Series | - |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 800mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Leads |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 10GHz |
| Supplier Device Package | UFM |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
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In Stock 57 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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