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MT3S113TU,LF

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: MT3S113TU,LF
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - RF
Gain 12.5dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Leads
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 11.2GHz
Supplier Device Package UFM
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 5.3V
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