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RN1104T5LFT

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet:	RN1104T5LFT
Description:	TRANS PREBIAS NPN 0.1W SSM
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - Bipolar (BJT) - Single, Pre-Biased
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Transistor Type	NPN - Pre-Biased
Base Part Number	RN110*
Resistor - Base (R1)	47 kOhms
Frequency - Transition	250MHz
Supplier Device Package	SSM
Resistor - Emitter Base (R2)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V

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