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RN1111MFV,L3F

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: RN1111MFV,L3F
Description: X34 PB-F VESM PLN (LF) TRANSISTO
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Part Status Active
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Transistor Type NPN - Pre-Biased
Resistor - Base (R1) 10 kOhms
Supplier Device Package VESM
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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