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RN1130MFV,L3F

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet:	RN1130MFV,L3F
Description:	TRANS PREBIAS NPN 0.15W VESM
RoHS status:	RoHS Compliant

Product Description
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Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - Bipolar (BJT) - Single, Pre-Biased
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Transistor Type	NPN - Pre-Biased
Resistor - Base (R1)	100 kOhms
Frequency - Transition	250MHz
Supplier Device Package	VESM
Resistor - Emitter Base (R2)	100 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V

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