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RN1425TE85LF

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet: RN1425TE85LF
Description: TRANS PREBIAS NPN 200MW SMINI
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Packaging Tape & Reel (TR)
Part Status Active
Power - Max 200mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN - Pre-Biased
Base Part Number RN142*
Resistor - Base (R1) 470 Ohms
Frequency - Transition 300MHz
Supplier Device Package S-Mini
Resistor - Emitter Base (R2) 10 kOhms
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 50mA
Current - Collector (Ic) (Max) 800mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max) 50V
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