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RN1427TE85LF

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Data Sheet:	RN1427TE85LF
Description:	TRANS PREBIAS NPN 200MW SMINI
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - Bipolar (BJT) - Single, Pre-Biased
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Type	NPN - Pre-Biased
Base Part Number	RN142*
Resistor - Base (R1)	2.2 kOhms
Frequency - Transition	300MHz
Supplier Device Package	S-Mini
Resistor - Emitter Base (R2)	10 kOhms
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 50mA
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)	50V

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