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RN1961(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet: RN1961(TE85L,F)
Description: TRANS 2NPN PREBIAS 0.2W US6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Type 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) 4.7kOhms
Frequency - Transition 250MHz
Supplier Device Package US6
Resistor - Emitter Base (R2) 4.7kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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