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RN1961FE(TE85L,F)

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet:	RN1961FE(TE85L,F)
Description:	TRANS 2NPN PREBIAS 0.1W ES6
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series	-
Packaging	Digi-Reel®
Part Status	Obsolete
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Type	2 NPN - Pre-Biased (Dual)
Resistor - Base (R1)	4.7kOhms
Frequency - Transition	250MHz
Supplier Device Package	ES6
Resistor - Emitter Base (R2)	4.7kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V

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