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RN2610(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet: RN2610(TE85L,F)
Description: TRANS 2PNP PREBIAS 0.3W SM6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Type 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) 4.7kOhms
Frequency - Transition 200MHz
Supplier Device Package SM6
Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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