RN2967(TE85L,F)
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Data Sheet: | RN2967(TE85L,F) |
Description: | TRANS 2PNP PREBIAS 0.2W US6 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Series | - |
Packaging | Digi-Reel® |
Part Status | Active |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Resistor - Base (R1) | 10kOhms |
Frequency - Transition | 200MHz |
Supplier Device Package | US6 |
Resistor - Emitter Base (R2) | 47kOhms |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 3000 pcs
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