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TK39J60W5,S1VQ

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TK39J60W5,S1VQ
Description: MOSFET N CH 600V 38.8A TO-3P(N)
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series DTMOSIV
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature Super Junction
Part Status Active
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Power Dissipation (Max) 270W (Tc)
Supplier Device Package TO-3P(N)
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
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