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TK4A60DB(STA4,Q,M)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TK4A60DB(STA4,Q,M)
Description: MOSFET N-CH 600V 3.7A TO-220SIS
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series π-MOSVII
FET Type N-Channel
Packaging Tube
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Vgs(th) (Max) @ Id 4.4V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 600V
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
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