TPC8018-H(TE12LQM)
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | TPC8018-H(TE12LQM) |
Description: | MOSFET N-CH 30V 18A SOP8 2-6J1B |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | - |
FET Type | N-Channel |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Obsolete |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 9A, 10V |
Power Dissipation (Max) | 1W (Ta) |
Supplier Device Package | 8-SOP (5.5x6.0) |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 2265pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 60 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.00 | $0.00 | $0.00 |
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