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TPH6R30ANL,L1Q

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TPH6R30ANL,L1Q
Description: X35 PB-F POWER MOSFET TRANSISTOR
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series U-MOSVIII-H
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 2.5V @ 500µA
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max) 2.5W (Ta), 54W (Tc)
Supplier Device Package 8-SOP Advance (5x5)
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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