TPN1R603PL,L1Q
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | TPN1R603PL,L1Q |
Description: | X35 PB-F POWER MOSFET TRANSISTOR |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | U-MOSIX-H |
FET Type | N-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Vgs(th) (Max) @ Id | 2.1V @ 300µA |
Operating Temperature | 175°C |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 40A, 10V |
Power Dissipation (Max) | 104W (Tc) |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 4890 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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