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TPN2R805PL,L1Q

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - FETs, MOSFETs - Single
Data Sheet:	TPN2R805PL,L1Q
Description:	X35 PB-F POWER MOSFET TRANSISTOR
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - FETs, MOSFETs - Single
Series	U-MOSIX-H
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Part Status	Active
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Vgs(th) (Max) @ Id	2.4V @ 300µA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	2.8mOhm @ 40A, 10V
Power Dissipation (Max)	2.67W (Ta), 104W (Tc)
Supplier Device Package	8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Drain to Source Voltage (Vdss)	45V
Input Capacitance (Ciss) (Max) @ Vds	3.2nF @ 22.5V
Current - Continuous Drain (Id) @ 25°C	139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V

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