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TPN2R805PL,L1Q

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TPN2R805PL,L1Q
Description: X35 PB-F POWER MOSFET TRANSISTOR
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series U-MOSIX-H
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 2.4V @ 300µA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V
Power Dissipation (Max) 2.67W (Ta), 104W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drain to Source Voltage (Vdss) 45V
Input Capacitance (Ciss) (Max) @ Vds 3.2nF @ 22.5V
Current - Continuous Drain (Id) @ 25°C 139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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