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TPN4R712MD,L1Q

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: TPN4R712MD,L1Q
Description: MOSFET P-CH 20V 36A 8TSON ADV
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - FETs, MOSFETs - Single
Series U-MOSVI
FET Type P-Channel
Packaging Digi-Reel®
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 1.2V @ 1mA
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max) 42W (Tc)
Supplier Device Package 8-TSON Advance (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
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