TPW1R306PL,L1Q
Manufacturers: | Toshiba Semiconductor and Storage |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | TPW1R306PL,L1Q |
Description: | X35 PB-F POWER MOSFET TRANSISTOR |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Toshiba Semiconductor and Storage |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | U-MOSIX-H |
FET Type | N-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Operating Temperature | 175°C |
Rds On (Max) @ Id, Vgs | 1.29mOhm @ 50A, 10V |
Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
Supplier Device Package | 8-DSOP Advance |
Gate Charge (Qg) (Max) @ Vgs | 91nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 8100pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 10079 pcs
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