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ULN2803APG,CN
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Arrays |
| Data Sheet: | ULN2803APG,CN |
| Description: | TRANS 8NPN DARL 50V 0.5A 18DIP |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - Arrays |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| Power - Max | 1.47W |
| Mounting Type | Through Hole |
| Package / Case | 18-DIP (0.300", 7.62mm) |
| Transistor Type | 8 NPN Darlington |
| Base Part Number | ULN280*A |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Frequency - Transition | - |
| Supplier Device Package | 18-DIP |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 76 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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