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TPD3215M
| Manufacturers: | Transphorm |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | TPD3215M |
| Description: | GANFET 2N-CH 600V 70A MODULE |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Transphorm |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | - |
| FET Type | 2 N-Channel (Half Bridge) |
| Packaging | Bulk |
| FET Feature | GaNFET (Gallium Nitride) |
| Part Status | Obsolete |
| Power - Max | 470W |
| Mounting Type | Through Hole |
| Package / Case | Module |
| Vgs(th) (Max) @ Id | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Supplier Device Package | Module |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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In Stock 67 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $178.83 | $175.25 | $171.75 |
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