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SI2308BDS-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SI2308BDS-T1-GE3
Description: MOSFET N-CH 60V 2.3A SOT23-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET®
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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