SI3900DV-T1-GE3
Manufacturers: | Vishay / Siliconix |
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Product Category: | Transistors - FETs, MOSFETs - Arrays |
Data Sheet: | SI3900DV-T1-GE3 |
Description: | MOSFET 2N-CH 20V 2A 6-TSOP |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
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Manufacturer | Vishay / Siliconix |
Product Category | Transistors - FETs, MOSFETs - Arrays |
Series | TrenchFET® |
FET Type | 2 N-Channel (Dual) |
Packaging | Digi-Reel® |
FET Feature | Logic Level Gate |
Part Status | Active |
Power - Max | 830mW |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Base Part Number | SI3900 |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
Supplier Device Package | 6-TSOP |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Current - Continuous Drain (Id) @ 25°C | 2A |
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In Stock 5957 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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