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SIDR610DP-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SIDR610DP-T1-GE3
Description: MOSFET N-CHAN 200V PPAK SO-8DC
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET®
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 31.9mOhm @ 10A, 10V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Supplier Device Package PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 200V
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
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