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SIHD2N80E-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SIHD2N80E-GE3
Description: MOSFET N-CH 800V 2.8A DPAK
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series E
FET Type N-Channel
Packaging Cut Tape (CT)
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V
Power Dissipation (Max) 62.5W (Tc)
Supplier Device Package D-PAK (TO-252AA)
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
Drain to Source Voltage (Vdss) 800V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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