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SIRC10DP-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SIRC10DP-T1-GE3
Description: MOSFET N-CH 30V 60A POWERPAKSO-8
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
FET Type N-Channel
Packaging Cut Tape (CT)
Vgs (Max) +20V, -16V
Technology MOSFET (Metal Oxide)
FET Feature Schottky Diode (Body)
Part Status Active
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V
Power Dissipation (Max) 43W (Tc)
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 1873pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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