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SISH106DN-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SISH106DN-T1-GE3
Description: MOSFET N-CHAN PPAK 1212-8SH
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET®
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id 1.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max) 1.5W (Ta)
Supplier Device Package PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
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