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SISS02DN-T1-GE3

Manufacturers: Vishay / Siliconix
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: SISS02DN-T1-GE3
Description: MOSFET N-CHAN 25V POWERPAK 1212-
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Vishay / Siliconix
Product Category Transistors - FETs, MOSFETs - Single
Series TrenchFET® Gen IV
FET Type N-Channel
Packaging Cut Tape (CT)
Vgs (Max) +16V, -12V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S
Vgs(th) (Max) @ Id 2.2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 15A, 10V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V
Drain to Source Voltage (Vdss) 25V
Input Capacitance (Ciss) (Max) @ Vds 4450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 51A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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