SQD19P06-60L_T4GE3
Manufacturers: | Vishay / Siliconix |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | SQD19P06-60L_T4GE3 |
Description: | MOSFET P-CH 60V 20A TO252AA |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | Vishay / Siliconix |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | Automotive, AEC-Q101, TrenchFET® |
FET Type | P-Channel |
Packaging | Digi-Reel® |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 55mOhm @ 19A, 10V |
Power Dissipation (Max) | 46W (Tc) |
Supplier Device Package | TO-252AA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Input Capacitance (Ciss) (Max) @ Vds | 1490pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
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In Stock 2264 pcs
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