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IPG20N10S4L35ATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Arrays
Data Sheet: IPG20N10S4L35ATMA1
Description: MOSFET 2N-CH 8TDSON
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Arrays
Series Automotive, AEC-Q101, OptiMOS™
FET Type 2 N-Channel (Dual)
Packaging Digi-Reel®
FET Feature Logic Level Gate
Part Status Active
Power - Max 43W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Vgs(th) (Max) @ Id 2.1V @ 16µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 35mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
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