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IPG20N10S4L35ATMA1
| Manufacturers: | Infineon Technologies |
|---|---|
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Data Sheet: | IPG20N10S4L35ATMA1 |
| Description: | MOSFET 2N-CH 8TDSON |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Arrays |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| Packaging | Digi-Reel® |
| FET Feature | Logic Level Gate |
| Part Status | Active |
| Power - Max | 43W |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
| Supplier Device Package | PG-TDSON-8-4 |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
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In Stock 14887 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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