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PDTC114ES,126
| Manufacturers: | NXP USA Inc. |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Data Sheet: | PDTC114ES,126 |
| Description: | TRANS PREBIAS NPN 500MW TO92-3 |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | NXP USA Inc. |
| Product Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Series | - |
| Packaging | Tape & Box (TB) |
| Part Status | Obsolete |
| Power - Max | 500mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Type | NPN - Pre-Biased |
| Base Part Number | PDTC114 |
| Resistor - Base (R1) | 10 kOhms |
| Supplier Device Package | TO-92-3 |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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In Stock 95 pcs
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