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GT60N321(Q)
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - IGBTs - Single |
| Data Sheet: | GT60N321(Q) |
| Description: | IGBT 1000V 60A 170W TO3P LH |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - IGBTs - Single |
| Series | - |
| IGBT Type | - |
| Packaging | Tube |
| Input Type | Standard |
| Part Status | Obsolete |
| Power - Max | 170W |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Test Condition | - |
| Base Part Number | GT60 |
| Switching Energy | - |
| Td (on/off) @ 25°C | 330ns/700ns |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-3P(LH) |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Reverse Recovery Time (trr) | 2.5µs |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
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In Stock 80 pcs
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