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MT3S113(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: MT3S113(TE85L,F)
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - RF
Gain 11.8dB
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 800mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 12.5GHz
Supplier Device Package S-Mini
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Current - Collector (Ic) (Max) 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max) 5.3V
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