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MT3S111P(TE12L,F)
| Manufacturers: | Toshiba Semiconductor and Storage |
|---|---|
| Product Category: | Transistors - Bipolar (BJT) - RF |
| Data Sheet: | MT3S111P(TE12L,F) |
| Description: | RF TRANS NPN 6V 8GHZ PW-MINI |
| RoHS status: | RoHS Compliant |
| Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Product Category | Transistors - Bipolar (BJT) - RF |
| Gain | 10.5dB |
| Series | - |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 1W |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Frequency - Transition | 8GHz |
| Supplier Device Package | PW-MINI |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
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In Stock 7876 pcs
| Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
|---|---|---|---|
| $0.00 | $0.00 | $0.00 |
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